 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NST45011MW6T1G Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra-small SOT-363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Features http://onsemi.com (3) (2) (1) * * * * Current Gain Matching to 10% Base-Emitter Voltage Matched to 2 mV Drop-In Replacement for Standard Device These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Q1 Q2 (4) (5) (6) MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 45 50 6.0 100 Unit V V V mAdc 6 1 SOT-363 CASE 419B STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR-5 Board (Note 1) TA = 25C Derate Above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW 2F MG G 2F = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) 3.0 RqJA TJ, Tstg 328 -55 to +150 mW/C C/W C ORDERING INFORMATION Device NST45011MW6T1G Package Shipping SOT-363 3000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 October, 2009 - Rev. 1 1 Publication Order Number: NST45011MW6/D NST45011MW6T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage, (IC = 10 mA) Collector -Emitter Breakdown Voltage, (IC = 10 mA, VEB = 0) Collector -Base Breakdown Voltage, (IC = 10 mA) Emitter -Base Breakdown Voltage, (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 2) Collector -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base -Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base -Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (Note 3) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product, (IC = 10 mA, VCE = 5 Vdc, f = 100 MHz) Output Capacitance, (VCB = 10 V, f = 1.0 MHz) Noise Figure, (IC = 0.2 mA, VCE = 5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) fT Cob NF 100 - - - - - - 4.5 10 MHz pF dB hFE hFE(1)/hFE(2) VCE(sat) 150 200 0.9 - - 700 850 580 - - - 300 1.0 - - 750 890 660 - 1.0 - 500 - 250 600 800 950 700 770 2.0 - V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 45 50 50 6.0 - - - - - - - - - - - - 15 5.0 V V V V nA mA Symbol Min Typ Max Unit mV VBE(sat) mV VBE(on) VBE(1) - VBE(2) mV 2. hFE(1)/hFE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller hFE is used as numerator. 3. VBE(1) - VBE(2) is the absolute difference of one transistor compared to the other transistor within the same package. http://onsemi.com 2 NST45011MW6T1G TYPICAL CHARACTERISTICS 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA VB, TEMPERATURE COEFFICIENT (mV/ C) 1.0 Figure 2. "Saturation" and "On" Voltages -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 400 300 200 Figure 4. Base-Emitter Temperature Coefficient 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 NST45011MW6T1G TYPICAL CHARACTERISTICS 200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 7 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. 10 5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 VCE, COLLECTOR-EMITTER VOLTAGE (V) 65 100 2.0 1.0 Figure 7. Active Region Safe Operating Area http://onsemi.com 4 NST45011MW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE W e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. 4 DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 D 6 5 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NST45011MW6/D |
Price & Availability of NST45011MW6T1G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |